Power Transistors
2SD1752, 2SD1752A
Silicon NPN epitaxial planar type
For power amplification and low-voltage switching...
Power
Transistors
2SD1752, 2SD1752A
Silicon
NPN epitaxial planar type
For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A
q q q q q
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
Low collector to emitter saturation voltage VCE(sat) High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 40 50 20 40 5 20 10 15 1.3 150 –55 to +150 Unit V
7.2±0.3
0.8±0.2
s Features
1.1±0.1
0.85±0.1 0.4±0.1
1.0±0.2
10.0 –0.
+0.3
0.75±0.1
2.3±0.2 4.6±0.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1752 2SD1752A 2SD1752 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.5±0.2 2.0±0.2
7.0±0.3
Unit: mm
0 to 0.15
3.0±0.2
10.2±0.3 1.0 max.
Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
A A
1.1±0.1
2.5
0.75±0.1
0.5 max.
0.9±0.1 0 to 0.15
W ˚C
1
2
3
2.3±0.2
˚C
4.6±0.4
1:Base 2:Collector 3:Emitter I Type Package (Y)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1752 2SD1752A 2SD1752 2SD1752A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2
*
Conditions VCB = 40V, IE = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0...
