Power Transistors
2SD1751
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1170
7.0...
Power
Transistors
2SD1751
Silicon
NPN triple diffusion planar type
For power amplification Complementary to 2SB1170
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
s Features
q q
10.0 –0.
+0.3
7.2±0.3
0.8±0.2
1.1±0.1
0.85±0.1 0.4±0.1
q
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 60 60 6 4 2 15 1.3 150 –55 to +150 Unit V
1.0±0.2
0.75±0.1
2.3±0.2 4.6±0.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.5±0.2 2.0±0.2
7.0±0.3
Unit: mm
0 to 0.15
3.0±0.2
10.2±0.3 7.2±0.3
V A A
1.0 max.
2.5
1.1±0.1
0.75±0.1
0.5 max.
0.9±0.1 0 to 0.15
W
1 2 3
˚C ˚C
2.3±0.2 4.6±0.4
1:Base 2:Collector 3:Emitter I Type Package (Y)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h
(TC=25˚C)
Symbol ICES ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton tstg tf IC = 1A, IB1 = ...
