2SD1742

Power Transistors 2SD1742, 2SD1742A Silicon NPN triple diffusion planar type For low-freauency power amplification Complementary to 2SB1172 and 2SB1172A 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 80 60 80 6 5 3 15 1.3 150 –55 to +150 Unit V 7.2±0.3 0.8±0.2 1.1±0.1 1.0±0.2 10.0 –0. +0.3 0.85±0.1 0.4±0.1 0.75±0.1 2.3±0.2 4.6±0.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1742 2SD1742A 2SD1742 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 emitter voltage 2SD1742A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 10.2±0.3 7.2±0.3 V A A W ˚C ˚C 3.0±0.2 1.0 max. 2.5 1.1±0.1 0.75±0.1 0.5 max. 0.9±0.1 0 to 0.15 1 2 3 2.3±0.2 4.6±0.4 s Electrical Characteristics (TC=25˚C) Parameter Symbol ICES ICEO IEBO 2SD1742 2SD1742A VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE...