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2SD1662

Part Number	2SD1662
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Apr 3, 2005
Detailed Description	2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switchin...
Datasheet	2SD1662 PDF File

Overview

2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit: mm · High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) · Low collector saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 15 A) · Monolithic construction with built-in base-emitter shunt resistor.
Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 100 100 5 15 1 100 150 −55 to 150 Unit V V V A A W °C °C Equivale...

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