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2SD1628

Sanyo Semicon Device

NPN Epitaxial Planar Silicon Transistor

Ordering number:EN1781A NPN Epitaxial Planar Silicon Transistor 2SD1628 High-Current Switching Applications Applicatio...


Sanyo Semicon Device

2SD1628

File Download Download 2SD1628 Datasheet


Description
Ordering number:EN1781A NPN Epitaxial Planar Silicon Transistor 2SD1628 High-Current Switching Applications Applications · Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers. Features · Low saturation voltage. · High hFE. · Large current capacity. · Very small size making it easy to provide high- density, small-sized hybrid IC’s. Specifications Package Dimensions unit:mm 2038A [2SD1628] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions Mounted on ceramic board (250mm2× 0.8mm) Ratings 60 20 6 5 8 500 1.5 150 –55 to +150 Unit V V V A A mW W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=50V, IE=0 Emitter Cutoff Current IEBO VEB=5V, IC=0 DC Current Gain hFE1 hFE2 VCE=2V, IC=0.5A VCE=2V, IC=3A Gain-Bandwidth Product fT VCE=10V, IC=50mA Output Capacitance Cob VCB=10V, f=1MHz * The 2SD1628 is classified by 0.5A hFE as follows : 120 E 200 160 F 320 280 G 560 Marking : DK Ratings min typ max Unit 100 nA 100 nA 120* 560* 95 120 MHz 45 pF Continued on next page. Any and all SANYO products described ...




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