2SD1624

Ordering number:ENN2019A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1124/2SD1624 High Current Switching Applications Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit:mm 2038A [2SB1124/2SD1624] 4.5 1.6 Features · Adoption of FBET, MBIT processes. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Large current capacity and wide ASO. 0.4 3 1.5 1.5 0.5 2 3.0 0.75 1 1.0 2.5 4.25max 0.4 ( ) : 2SB1124 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on ceramic board (250mm2×0.8mm) 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Conditions Ratings (–)60 (–)50 (–)6 (–)3 (–)6 500 1.5 150 –55 to +150 Unit V V V A A mW W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE1 hFE2 fT VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)3A VCE=(–)10V, IC=(–)50mA 100* 35 150 MHz Conditions Ratings min typ max (–)1 (–)1 560* Unit µA µA * ; The 2SB1124/2SD1624 are classified by 100mA hFE as follows : Rank hFE R 100 to 200 S 140 to 280 T 200 to 400 U 280 to 560 Marking 2SB1124 : BG 2SD1624 : DG Continued...