2SD1621

Ordering number:1787A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1121/2SD1621 High-Current Driver Applications Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit:mm 2038 Features · Adoption of FBET, MBIT processes. · Low collector-to-emitter saturation voltage. · Large current capacity and wide ASO. · Fast switching speed. · Very small size making it easy to provide high- density, small-sized hybrid IC’s. [2SB1121/2SD1621] E : Emitter C : Collector B : Base ( ) : 2SB1121 Specifications SANYO : PCP (Bottom view) Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted on ceramic board (250mm2×0.8mm) Ratings (–)30 (–)25 (–)6 (–)2 (–)5 500 1.3 150 –55 to +150 Unit V V V A A mW W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE1 hFE2 fT VCB=(–)20V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)1.5A VCE=(–)10V, IC=(–)50mA * ; The 2SB1121/2SD1621 are classified by 100mA hFE as follows : 100 R 200 140 S 280 200 T 400 280 U 560 Ratings min typ 100* 65 150 max (–)0.1 (–)0.1 560* Unit µA µA MHz Any and all SANYO products descr...