Ordering number:1784B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1118/2SD1618
Low-Voltage High-Current Amplifier, ...
Ordering number:1784B
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB1118/2SD1618
Low-Voltage High-Current Amplifier, Muting Applications
Features
· Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high-
density, small-sized hybrid IC’s.
Package Dimensions
unit:mm 2038
[2SB1118/2SD1618]
( ) : 2SB1118
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Conditions Mounted on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
ICBO IEBO hFE1 hFE2
fT
VCB=(–)15V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)50mA VCE=(–)2V, IC=(–)500mA VCE=(–)10V, IC=(–)50mA
* ; The 2SB1118/2SD1618 are classified by 50mA hFE as follows :
140 S 280 200 T 400 280 U 560
Marking 2SB1118 : BA 2SD1618 : DA
hFE rank : S, T, U
E : Emitter C : Collector B : Base
SANYO : PCP (Bottom view)
Ratings (–)20 (–)15 (–)5 (–)0.7 (–)1.5 500 1.3 150
–55 to +150
Unit V V V A A
mW W ˚C ˚C
Ratings min typ
140* 60
250
max (–)0.1 (–)0.1 560*
Unit µA µA
MHz
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high level...