DatasheetsPDF.com

2SD1606 Dataheets PDF



Part Number 2SD1606
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD1606 Datasheet2SD1606 Datasheet (PDF)

2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 1 2 3 2SD1606 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEB.

  2SD1606   2SD1606


Document
2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 1 2 3 2SD1606 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Ratings 120 120 7 6 12 40 150 –55 to +150 6 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 — — 1000 — — — — — — — — Typ — — — — — — — — — — 0.6 7.0 2.0 Max — — 100 10 20000 1.5 3.0 2.0 3.5 3.0 — — — V V V V V µs µs µs Unit V V µA µA Test conditions I C = 25 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 3 A*1 I C = 3 A, IB = 6 mA*1 I C = 6 A, IB = 60 mA*1 I C = 3 A, IB = 6 mA*1 I C = 6 A, IB = 60 mA*1 I D = 6 A*1 I C = 3 A, IB1 = –IB2 = 6 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Storage time Fall time Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t stg tf 2 2SD1606 Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 10 iC (peak) Collector current IC (A) IC (max) 3 PW Area of Safe Operation 1 µs 0µ 10 s 40 1m s 1.0 0.3 0.1 Ta = 25°C 1 shot pulse 0.03 DC C s 5° =2 0m TC =1 n( tio era Op 20 ) 0 50 100 Case temperature TC (°C) 150 3 10 30 100 300 Collector to emitter voltage VCE (V) Typical Output Characteristics 10 DC current transfer ratio hFE 2.5 30,000 DC Current Transfer Ratio vs. Collector Current Collector current IC (A) 8 3.0 10,000 3,000 1,000 300 100 30 0.1 2.0 1.5 1.0 6 =7 Ta 25 5 –2 5°C 4 0.5 mA 2 Ta = 25°C IB = 0 VCE = 3 V Pulse 0 1 2 3 4 Collector to emitter voltage VCE (V) 5 0.3 1.0 3 Collector current IC (A) 10 3 2SD1606 Collector to emitter saturation voltage VCE (sat) (V) Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current –10 3 1.0 VCE (sat) 0.3 0.1 Ta = 25°C 0.03 0.01 0.1 500 lC/lB = 200 500 200 3 Switching time t (µs) 1.0 0.3 0.1 0.03 0.01 0.1 VCC = 30 V IC = 100 IB1 = –100 IB2 0.3 1.0 3 Collector current IC (A) 10 tf ton 10 VBE (sat) Switching Time vs. Collector Current tstg Ta = 25°C 0.3 1.0 3 Collector current IC (A) 10 Transient Thermal Resistance 10 Thermal resistance θj-c (°C/W) 1 s to 1,000 s 3 1.0 0.3 0.1 0.03 0.01 1 1 10 10 Time t 100 100 1,000 (s) 1,000 (ms) TC = 25°C 1 ms to 1 s 4 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 -0.08 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 +0.2 –0.1 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 MAX 14.0 ± 0.5 1.5 MAX 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in an.


2SD1584-Z 2SD1606 2SD1609


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)