Power Transistors
2SD1535
Silicon NPN triple diffusion planar type Darlington
For high power amplification
0.7±0.1 10.0...
Power
Transistors
2SD1535
Silicon
NPN triple diffusion planar type Darlington
For high power amplification
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2
Unit: mm
s Features
q q q q
Extremely satisfactory linearity of the forward current transfer ratio hFE High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 500 400 12 14 7 0.5 50 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
14.0±0.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25 5.08±0.5 1 2
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
3
Internal Connection
C B
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*V CEO(sus)
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO(sus)* hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VCE = 400V, IB = 0 VEB = 12V, IC = 0 IC = 100mA, RBZ = ∞, L = 25mH VCE = 2V, IC = 2A VCE = ...