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2SD1525

Part Number	2SD1525
Manufacturer	Toshiba Semiconductor
Description	NPN Transistor
Published	Apr 3, 2005
Detailed Description	2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1525 High Current Switchin...
Datasheet	2SD1525 PDF File

Overview

2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1525 High Current Switching Applications Unit: mm · High collector current: IC = 30 A · High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) · Monolithic construction with built-in base-emitter shunt resistor.
Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 100 100 5 30 5 150 150 −55 to 150 Unit V V V A A W °C °C Equivalent Circuit COLLECTOR BASE ≈ 2 kΩ ...

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