DatasheetsPDF.com

2SD1509

Toshiba Semiconductor
Part Number 2SD1509
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD1509 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD1509 Micro-Motor Drive, Hammer D...
Datasheet PDF File 2SD1509 PDF File

2SD1509
2SD1509

Overview
2SD1509 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD1509 Micro-Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 1 A, IB = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 8 V Collector current IC 2 A Base current IB 0.
5 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.
5 W 10 JEDEC JEITA ― ― Junction temperature Storage temperature range ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)