2SD1508
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)
2SD1508
Pulse Motor D...
2SD1508
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process) (Darlington power
transistor)
2SD1508
Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
30 30 10 1.5 3.0 50 1.2 10 150 −55 to 150
V V V
A
mA
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
BASE
COLLECTOR
EMITTER
1 2006-11-21
Electrical Characteristics (Ta = 25°...