2SD1489

2SD1489 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1058 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD1489 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 16 6 2 0.75 150 –55 to +150 Unit V V V A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 20 16 6 — — 1 Typ — — — — — — — 80 20 Max — — — 2 0.2 500 0.3 — — Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 16 V, IE = 0 VEB = 6 V, IC = 0 VCE = 2 V, IC = 0.1 A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: B 100 to 200 C 160 to 320 D 250 to 500 V(BR)EBO I CBO I EBO hFE* 100 — — — VCE(sat) fT Cob V MHz pF I C = 1 A, IB = 0.1 A VCE = 2 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SD1489 is grouped by h FE as follows. See characteristic curves of 2SD787. 2 2SD1489 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) 0.8 0.4 0 50 100 150 Ambient Temperature Ta (°C) 3 Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3...