2SD1471

2SD1471 Silicon NPN Planar, Darlington Application High gain amplifier Outline UPAK 1 3 2 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 1 3 2SD1471 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 40 30 10 300 500 1 150 –55 to +150 Unit V V V mA mA W °C °C Notes: 1. Pulse ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 40 30 10 — — 1 Typ — — — — — — — — — — Max — — — 1 10 100000 — — 1.5 2.0 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 30 V, IE = 0 VCE = 24 V, RBE = ∞ VCE = 5 V, IC = 10 mA*2 VCE = 5 V, IC = 100 mA*2 VCE = 5 V, IC = 400 mA*2 I C = 100 mA, IB = 0.1 mA*2 I C = 100 mA, IB = 0.1 mA*2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE1* hFE2* 1 hFE3* 1 Collector to emitter saturation voltage Base to emitter saturation voltage VCE(sat) VBE(sat) 2000 3000 3000 — — V V Notes: 1. The 2SD1471 is grouped by h FE as follows. 2. Pulse test Mark hFE1 hFE2 hFE3 DT ET 2000 to 100000 5000 to 100000 3000 min 3000 min ...