2SD1470

2SD1470 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline UPAK 1 3 2 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 1 3 2SD1470 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 60 60 7 1 2 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 60 60 7 — — 2000 — — Typ — — — — — — — — Max — — — 10 10 100000 1.5 2.0 V V Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 60 V, IE = 0 VEB = 7 V, IC = 0 VCE = 3 V, IC = 0.5 A*1 I C = 500 mA, IB = 0.5 mA*1 I C = 500 mA, IB = 0.5 mA*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Notes: 1. Pulse test 2. Marking is “AT”. V(BR)EBO I CBO I EBO hFE VCE(sat) VBE(sat) 2 2SD1470 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) (on the alumina ceramic board) Collector Current IC (A) 10 3 1.0 0.3 0.1 0.03 0.01 0...