2SD1468S

Muting Transistor (15V, 1A) 2SD1468S Features 1) Low saturation voltage, typically VCE(sat) = 0.08V at Ic / IB = 500mA / 500A. 2) Ideal for low voltage, high current drives. 3) High DC current gain and high current. Dimensions (Unit : mm) SPT 4.0 3.0 2.0 (15Min.) 3Min. 0.45 2.5 5.0 (1) (2) (3) 0.5 0.45 (1)Emitter (2)Collector (3)Base Taping specifications Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits 30 15 5 1 0.3 150 −55 to +150 Unit V V V A W °C °C Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 30 15 5 − − − 120 50 − Typ. − − − − − 0.08 − 150 15 Max. − − − 0.5 0.5 0.4 390 − 30 Unit V V V μA μA V − MHz pF IC=50μA IC=1mA IE=50μA VCB=20V VEB=4V IC/IB=0.5mA/50mA VCE/IC=3V/0.1A VCE=5V , IE= −50mA , f=100MHz VCE=10V , IE=0A , f=1MHz Conditions Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SD1468S SPT QRS TP 5000 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 2009.12 - Rev.B 2SD1468S Electrical characteris...