Transistor
2SD1450
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
4.0±0.2
3.0±0.2 0.7±0.1
...
Transistor
2SD1450
Silicon
NPN epitaxial planer type
For low-frequency amplification
Unit: mm
4.0±0.2
3.0±0.2 0.7±0.1
s Features
q q q
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (Ta=25˚C) Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 25 20 12 1 0.5 300 150 –55 ~ +150
Unit V V V A A mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.54±0.15
EIAJ:SC–72 New S Type Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*3 Conditions VCB = 25V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 1A*2 IC = 500mA, IB = 20mA*2 IC = 500mA, IB = 20mA*2 200 10 0.6
*2
min
typ
max 100
2.0±0.2
(Ta=25˚C)
marking
+0.2 0.45–0.1
s Absolute Maximum Ratings
15.6±0.5
Optimum for high-density mounting. Allowing supply with the radial taping. Low collector to emitter saturation voltage VCE(sat).
Unit nA V V V
25 20 12 200 60 0.13 0.4 1.2 800
V V MHz pF Ω
VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz
Pulse measureme...