Power Transistors
2SB948, 2SB948A
Silicon PNP epitaxial planar type
For low-voltage switching Complementary to 2SD1445 ...
Power
Transistors
2SB948, 2SB948A
Silicon
PNP epitaxial planar type
For low-voltage switching Complementary to 2SD1445 and 2SD1445A
0.7±0.1
Unit: mm
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2
s Features
q q q
16.7±0.3 14.0±0.5
Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –40 –50 –20 –40 –5 –20 –10 40 2 150 –55 to +150 Unit V
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB948 2SB948A 2SB948 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
emitter voltage 2SB948A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
Solder Dip
4.0
7.5±0.2
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB948 2SB948A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2
*
Conditions VCB = –40V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A IC = –10A, IB = – 0.33A IC = –10A, IB = – 0.33A VCE = –10V, IC = – 0.5A, f = 10MHz VCB = –10V, IE = 0, f = 1MHz IC = –3A, IB1 = – 0.1A, IB2 = 0.1A
min
typ
max –50 –50
Unit µA µA V
–20 –40 45 90 260 – 0.6 –1.5 100 400 0.1 0.5 0.1
Forward current transfer ratio Collector ...