Power Transistors
2SB953, 2SB953A
Silicon PNP epitaxial planar type
For low-voltage switching Complementary to 2SD1444 ...
Power
Transistors
2SB953, 2SB953A
Silicon
PNP epitaxial planar type
For low-voltage switching Complementary to 2SD1444 and 2SD1444A
0.7±0.1
Unit: mm
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2
s Features
q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB953 2SB953A 2SB953 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
–40 –50 –20 –40 –5 –12 –7 30 2 150 –55 to +150
4.0 14.0±0.5 Solder Dip
Ratings
Unit V
emitter voltage 2SB953A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
16.7±0.3
Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw
7.5±0.2
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB953 2SB953A 2SB953 2SB953A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT Cob ton tstg tf IC = –2A, IB1 = –66mA, IB2 = 66mA Conditions VCB = –40V, IE = 0 VCB = –50V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –2A IC = –5A, IB = – 0.16A IC = –5A, IB = – 0.16A VCE = –10V, IC = – 0.5A, f = 10MHz VCB = –10V, IE = 0, f = 1MHz 150 140 0.1 0.5 0.1 –20 –40 45 90 260 – 0.6 –1.5 V V MHz pF µs...