Document
Transistor
2SD1424
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
4.0±0.2
s Features
q q q
0.7±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings 50 40 15 100 50 300 150 –55 ~ +150 Unit V
1
2
3
1.27 1.27
V V mA mA mW ˚C ˚C
1:Emitter 2:Collector 3:Base
2.54±0.15
EIAJ:SC–72 New S Type Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT NV Conditions VCB = 10V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = –2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 50 40 15 400 0.05 200 80 2000 0.2 V MHz mV min typ max 0.1 1 Unit µA µA V V V
*h
FE
Rank classification
R 400 ~ 800 S T hFE 600 ~ 1200 1000 ~ 2000
Rank
2.0±0.2
marking
+0.2 0.45–0.1
15.6±0.5
Optimum for high-density mounting. Allowing supply with the radial taping. High foward current transfer ratio hFE.
3.0±0.2
1
Transistor
PC — Ta
500 120 Ta=25˚C 100 100 25˚C Ta=75˚C 80 –25˚C
2SD1424
IC — VCE
120 VCE=10V
IC — VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
80
IB=100µA 90µA 80µA 70µA 60µA 50µA 40µA 30µA
300
60
Collector current IC (mA)
400
60
200
40
40
100
20
20µA 10µA
20
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.1 IC/IB=10 1800
hFE — IC
400 VCE=10V
fT — I E
VCB=10V Ta=25˚C
Forward current transfer ratio hFE
1500
Transition frequency fT (MHz)
30 100
350 300 250 200 150 100 50
1200 Ta=75˚C 900 25˚C –25˚C 600
Ta=75˚C
300
0.3
1
3
10
30
100
0 0.1
0.3
1
3
10
0 – 0.1 – 0.3
–1
–3
–10
–30
–100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob — VCB
5 120 IE=0 f=1MHz Ta=25˚C
NV — IC
VCE=10V GV=80dB Function=FLAT
Collector output capacitance Cob (pF)
Noise voltage NV (mV)
4
100
80
3
Rg=100kΩ
60 22kΩ 40 5kΩ
2
1
20
0 1 3 10 30 100
0 0.01
0.03
0.1
0.3
1
Collector to base voltage VCB (V)
Collector current IC (mA)
2
.