Transistor
2SD1423, 2SD1423A
Silicon NPN epitaxial planer type
For low-frequency amplification Complementary to 2SB1030...
Transistor
2SD1423, 2SD1423A
Silicon
NPN epitaxial planer type
For low-frequency amplification Complementary to 2SB1030 and 2SB1030A
Unit: mm
4.0±0.2
3.0±0.2
s Features
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1423 2SD1423A 2SD1423 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol
(Ta=25˚C)
0.7±0.1 2.0±0.2
marking 1 2 3
30 60 25 50 7 1 0.5 300 150 –55 ~ +150
V
emitter voltage 2SD1423A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V A A mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1.27 1.27 2.54±0.15
EIAJ:SC–72 New S Type Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD1423 2SD1423A 2SD1423 2SD1423A
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 6
*2
+0.2 0.45–0.1
Ratings
Unit
15.6±0.5
Optimum for high-density mounting. Allowing supply with the radial taping.
min
typ
max 0.1 1
Unit µA µA V
30 60 25 50 7 85 40 0.6 340
V V
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
V MHz
15
pF
Pulse measurement
*1h
...