2SD1410A

2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1410A High Voltage Switching Applications Industrial Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 250 V Emitter-base voltage VEBO 5 V Collector current IC 6 A Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.0 W 25 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― Note1: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in TOSHIBA 2-10R1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 1.7 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 4 kΩ Emitter 1 2009-12-21 Electrical Characteristics (Ta = 25°C) 2SD1410A Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain C...