Ordering number:EN1221C
NPN Triple Diffused Planar Silicon Darlington Transistor
2SD1395
Driver Applications
Applicati...
Ordering number:EN1221C
NPN Triple Diffused Planar Silicon Darlington
Transistor
2SD1395
Driver Applications
Applications
· Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers).
Package Dimensions
unit:mm 2010C
Features
· High DC current gain. · Large current capacity · Wide ASO. · On-chip Zener diode of 60±10V between collector
and base. · Uniformity in collector-to-base breakdown voltage
due to adoption of accurate impurity diffusion process. · High inductive load handling capability.
Specifications
18.0 5.6
[2SD1395]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
1.2
0.8 123 2.55 2.55
2.7 14.0
0.4 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
* : With Zener diode of (60±10V).
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Tc=25˚C
Conditions
Ratings 50* 50* 6 5 8 0.5 40 150
–55 to +150
Unit V V V A A A W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO IEBO hFE
fT VCE(sat) VBE(sat)
VCB=40V, IE=0 VEB=5V, IC=0 VCE=3V, IC=2.5A VCE=5V, IC=2.5A IC=2.5A, IB=5mA IC=2.5A, IB=5mA
Ra...