2SD1383K

2SD1383K High-gain Amplifer Transistor (32V, 0.3A) Parameter VCES IC R Value 32V 0.3A 4kΩ lFeatures 1)Darlington connection for high DC current gain. 2)Built-in 4kΩ resistor between base and emitter. 3)Complements the 2SB852K. lOutline 　 SOT-346 　 SC-59 SMT3 lInner circuit 　 　 　 　 　 Datasheet lApplication HIGH GAIN AMPLIFIER lPackaging specifications 　　　　　　　　　　　　　　　　　　　　　　 Part No. Package Package size Taping code Reel size Tape width (mm) (mm) Basic ordering unit.(pcs) Marking 2SD1383K SOT-346 2928 T146 180 8 3000 W (SMT3) 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/6 20160129 - Rev.001 2SD1383K 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature 　 　 　 　 　 　 　 　 Datasheet Symbol VCBO VCES VEBO IC ICP*1 PD*2 Tj Tstg Values 40 32 6 0.3 1.5 200 150 -55 to +150 Unit V V V A A mW ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Collector-base breakdown voltage BVCBO IC = 100μA Collector-emitter breakdown voltage BVCES IC = 1mA, RBE = 0Ω Emitter-base breakdown voltage BVEBO IE = 100μA Collector cut-off current Emitter cut-off current ICBO VCB = 24V IEBO VEB = 4.5V Collector-emitter saturation voltage VCE(sat)*3 IC = 200mA, IB = 0.4mA DC current gain ...