2SD1383K
High-gain Amplifer Transistor (32V, 0.3A)
Parameter
VCES IC R
Value
32V 0.3A 4kΩ
lFeatures
1)Darlington conn...
2SD1383K
High-gain Amplifer
Transistor (32V, 0.3A)
Parameter
VCES IC R
Value
32V 0.3A 4kΩ
lFeatures
1)Darlington connection for high DC current gain. 2)Built-in 4kΩ resistor between base and emitter. 3)Complements the 2SB852K.
lOutline
SOT-346 SC-59
SMT3
lInner circuit
Datasheet
lApplication HIGH GAIN AMPLIFIER
lPackaging specifications
Part No.
Package
Package size
Taping code
Reel size Tape width (mm) (mm)
Basic ordering unit.(pcs)
Marking
2SD1383K
SOT-346 2928
T146
180
8
3000
W
(SMT3)
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20160129 - Rev.001
2SD1383K
lAbsolute maximum ratings (Ta = 25°C) Parameter
Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Power dissipation Junction temperature Range of storage temperature
Datasheet
Symbol
VCBO VCES VEBO IC ICP*1 PD*2 Tj Tstg
Values 40 32 6 0.3 1.5 200 150
-55 to +150
Unit V V V A A mW
℃ ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown voltage
BVCBO IC = 100μA
Collector-emitter breakdown voltage
BVCES IC = 1mA, RBE = 0Ω
Emitter-base breakdown voltage BVEBO IE = 100μA
Collector cut-off current Emitter cut-off current
ICBO VCB = 24V IEBO VEB = 4.5V
Collector-emitter saturation voltage VCE(sat)*3 IC = 200mA, IB = 0.4mA
DC current gain
...