2SD1350

Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching s Features q q q q q Unit: mm 2.4±0.2 2.0±0.2 3.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) Ratings 400 600 400 500 5 1 500 1 150 –55 ~ +150 1cm2 Unit V 6.9±0.1 1.5 0.4 2.5±0.1 1.0 1.0 1.5 R0.9 R0.9 1.0±0.1 0.85 Parameter Collector to base voltage Collector to 2SD1350 2SD1350A 2SD1350 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 0.55±0.1 1.25±0.05 0.45±0.05 3 2 1 emitter voltage 2SD1350A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V V A mA W ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage 2SD1350 2SD1350A 2SD1350 2SD1350A (Ta=25˚C) Symbol VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob ton tf tstg Conditions IC = 100µA, IE = 0 IC = 500µA, IB = 0 IE = 100µA, IC = 0 VCE = 5V, IC = 30mA IC = 250mA, IB = 50mA* IC = 250mA, IB = 50mA* VCB = 30V, IE = –20mA, f = 200MHz VCB = 30V, IE = 0, f...