Transistor
2SD1328
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converte...
Transistor
2SD1328
Silicon
NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
0.65±0.15
Unit: mm
2.8 –0.3
+0.2
1.5 –0.05
+0.25
0.65±0.15
s Features
0.95
q q q
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO ICP IC PC Tj Tstg
25 20 12 1 0.5 200 150 –55 ~ +150
V V V A A mW ˚C ˚C
1:Base 2:Emitter 3:Collector
JEDEC:TO–236 EIAJ:SC–59 Mini Type Package
Marking symbol : 1D
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE*1 VCE(sat) VBE(sat) fT Cob Ron*3 Conditions VCB = 25V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A*2 IC = 0.5A, IB = 20mA*2 IC = 0.5A, IB = 50mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 10 1.0
*2
min
typ
0 to 0.1
0.1 to 0.3 0.4±0.2
0.8
Parameter
Symbol
Ratings
Unit
1.1 –0.1
max 100
0.16 –0.06
s Absolute Maximum Ratings
2
(Ta=25˚C)
+0.2 +0.1
0.4 –0.05
+0.1
Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE.
2.9...