2SD1314

2SD1314 TOSHIBA Transistor www.DataSheet4U.com Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD1314 Unit: mm High Power Switching Applications Motor Control Applications High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A) High speed: tf = 3 μs (max) (IC = 15 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 450 6 15 30 1.0 150 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F1A Weight: 9.75 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit COLLECTOR BASE ≈ 300 Ω ≈ 100 Ω EMITTER 1 2006-11-21 2SD1314 Electrical Characteristics (Tc = 25°C) ww...