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2SD1314

Toshiba Semiconductor
Part Number 2SD1314
Manufacturer Toshiba Semiconductor
Description NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD1314 TOSHIBA Transistor www.DataSheet4U.com Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD1314 ...
Datasheet PDF File 2SD1314 PDF File

2SD1314
2SD1314

Overview
2SD1314 TOSHIBA Transistor www.
DataSheet4U.
com Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD1314 Unit: mm High Power Switching Applications Motor Control Applications • • • High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.
4 A) High speed: tf = 3 μs (max) (IC = 15 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 450 6 15 30 1.
0 150 150 −55 to 150 Un...


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