2SD1276

Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type Darlington 0.7±0.1 For power amplification Complementary to 2SB950 and 2SB950A 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm q q 16.7±0.3 q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) 7.5±0.2 s Features φ3.1±0.1 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1276 2SD1276A 2SD1276 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 4.0 1.4±0.1 1.3±0.2 Ratings 60 80 60 80 5 8 4 40 2 150 –55 to +150 Unit V Solder Dip 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 emitter voltage 2SD1276A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C B 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1276 2SD1276A 2SD1276 2SD1276A 2SD1276 2SD1276A (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE fT ton tstg tf Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA VCE = 3V, IC = 3A VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 ...