Document
Power Transistors
2SD1275, 2SD1275A
Silicon NPN triple diffusion planar type Darlington
0.7±0.1
For power amplification Complementary to 2SB949 and 2SB949A
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2
Unit: mm
q q
16.7±0.3
q
High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 60 80 60 80 5 4 2 35 2 150 –55 to +150 Unit V
7.5±0.2
s Features
φ3.1±0.1
4.0
14.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1275 2SD1275A 2SD1275 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1.4±0.1
1.3±0.2
Solder Dip
0.8±0.1
0.5 –0.1
+0.2
2.54±0.25 5.08±0.5
emitter voltage 2SD1275A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W
B
1
2
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
3
Internal Connection
C
˚C ˚C
E
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1275 2SD1275A 2SD1275 2SD1275A 2SD1275 2SD1275A
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf
*
Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 8mA, IB2 = –8mA, VCC = 50V
min
typ
max 1 1 2 2 2
Unit mA
mA mA V
60 80 1000 2000 10000 2.8 2.5 20 0.5 4 1
Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE2
V V MHz µs µs µs
Rank classification
Q P 2000 to 5000 4000 to 10000
Rank hFE2
1
Power Transistors
PC — Ta
50 5 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C
2SD1275, 2SD1275A
IC — VCE
10 VCE=4V
IC — VBE
Collector power dissipation PC (W)
Collector current IC (A)
(1) 30
Collector current IC (A)
40
4 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA
8 25˚C TC=100˚C 6 –25˚C
3
20
2
4
10
(2) (3) (4)
1
2
0 0 20 40 60 80 100 120 140 160
0 0 1 2 3 4 5 6
0 0 0.8 1.6 2.4 3.2
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=250 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=–25˚C 100˚C 25˚C 105
hFE — IC
10000
Cob — VCB
Collector output capacitance Cob (pF)
VCE=4V IE=0 f=1MHz TC=25˚C
Forward current transfer ratio hFE
3000 1000 300 100 30 10 3 1 0.1
104 TC=100˚C
103
25˚C –25˚C
102
0.1
0.3
1
3
10
10 0.01 0.03
0.1
0.3
1
3
10
0.3
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100 30 103 Non rep.