2SD1274B

Power Transistors 2SD1274, 2SD1274A, 2SD1274B Silicon NPN triple diffusion planar type For power amplification Unit: mm 0.7±0.1 s Features q q q 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 4.2±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage 2SD1274 2SD1274A 2SD1274B 2SD1274 2SD1274A 2SD1274B VCEO VEBO IC PC Tj Tstg VCES VCBO Symbol (TC=25˚C) Ratings 150 200 250 150 200 250 80 6 5 40 2 150 –55 to +150 V V A W ˚C ˚C V 5.08±0.5 1 2 3 16.7±0.3 High collector to base voltage VCBO High-speed switching Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 Unit 14.0±0.5 Solder Dip 4.0 1.3±0.2 V 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current 2SD1274 2SD1274A 2SD1274B (TC=25˚C) Symbol Conditions VCB = 150V, IE = 0 ICBO VCEO(sus)* VEBO hFE VBE VCE(sat) fT tf VCB = 200V, IE = 0 VCB = 250V, IE = 0 IC = 0.2A, L = 25mH IE = 1mA, IC = 0 VCE = 4V, IC = 5A VCE = 4V, IC = 5A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A, f = 10MHz IC = 5A, IB1 = 0.8A, VEB = –5V X L 25mH Y 15V G 80 IC(A) 0.2 0.1 VCE(V) min typ max 1 1 1 Unit mA Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Colle...