Power Transistors
2SD1274, 2SD1274A, 2SD1274B
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm...
Power
Transistors
2SD1274, 2SD1274A, 2SD1274B
Silicon
NPN triple diffusion planar type
For power amplification
Unit: mm
0.7±0.1
s Features
q q q
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1
4.2±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage 2SD1274 2SD1274A 2SD1274B 2SD1274 2SD1274A 2SD1274B VCEO VEBO IC PC Tj Tstg VCES VCBO Symbol
(TC=25˚C)
Ratings 150 200 250 150 200 250 80 6 5 40 2 150 –55 to +150 V V A W ˚C ˚C V
5.08±0.5 1 2 3
16.7±0.3
High collector to base voltage VCBO High-speed switching Full-pack package which can be installed to the heat sink with one screw
7.5±0.2
Unit
14.0±0.5
Solder Dip
4.0
1.3±0.2
V
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25
Collector to emitter voltage
Collector to emitter voltage Emitter to base voltage Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current 2SD1274 2SD1274A 2SD1274B
(TC=25˚C)
Symbol Conditions VCB = 150V, IE = 0 ICBO VCEO(sus)* VEBO hFE VBE VCE(sat) fT tf VCB = 200V, IE = 0 VCB = 250V, IE = 0 IC = 0.2A, L = 25mH IE = 1mA, IC = 0 VCE = 4V, IC = 5A VCE = 4V, IC = 5A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A, f = 10MHz IC = 5A, IB1 = 0.8A, VEB = –5V
X L 25mH Y 15V G 80 IC(A) 0.2 0.1 VCE(V)
min
typ
max 1 1 1
Unit
mA
Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Colle...