2SD1268

Power Transistors 2SD1268 Silicon NPN epitaxial planar type For power switching Complementary to 2SB943 s Features q Low collector to emitter saturation voltage VCE(sat) q Satisfactory linearity of foward current transfer ratio hFE q Large collector current IC q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 6 A Collector current IC 3 A Collector power TC=25°C dissipation Ta=25°C PC 30 W 2 Junction temperature Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C 14.0±0.5 Solder Dip 4.0 16.7±0.3 7.5±0.2 0.7±0.1 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 123 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current Emitter cutoff current ICBO VCB = 100V, IE = 0 IEBO VEB = 5V, IC = 0 10 µA 50 µA Collector to emitter voltage VCEO IC = 10mA, IB = 0 80 V Forward current transfer ratio hFE1 hFE2* VCE = 2V, IC = 0.1A VCE = 2V, IC = 0.5A 45 60 260 Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.1A 0.5 V Base to emitter saturation voltage VBE(sat) IC = 2A, IB = 0.1A 1.5 V Transition fre...