Power Transistors
2SD1268
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB943
s Features
q L...
Power
Transistors
2SD1268
Silicon
NPN epitaxial planar type
For power switching Complementary to 2SB943
s Features
q Low collector to emitter saturation voltage VCE(sat) q Satisfactory linearity of foward current transfer ratio hFE q Large collector current IC q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
130
V
Collector to emitter voltage VCEO
80
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
6
A
Collector current
IC
3
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
30 W
2
Junction temperature Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
14.0±0.5 Solder Dip 4.0
16.7±0.3 7.5±0.2
0.7±0.1
10.0±0.2 5.5±0.2
Unit: mm
4.2±0.2 2.7±0.2
4.2±0.2
φ3.1±0.1
1.3±0.2 1.4±0.1
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25
5.08±0.5 123
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current Emitter cutoff current
ICBO
VCB = 100V, IE = 0
IEBO
VEB = 5V, IC = 0
10
µA
50
µA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
80
V
Forward current transfer ratio
hFE1 hFE2*
VCE = 2V, IC = 0.1A VCE = 2V, IC = 0.5A
45
60
260
Collector to emitter saturation voltage VCE(sat)
IC = 2A, IB = 0.1A
0.5
V
Base to emitter saturation voltage VBE(sat)
IC = 2A, IB = 0.1A
1.5
V
Transition fre...