2SD1266A

Power Transistors 2SB941, 2SB941A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SB941 –60 VCBO V base voltage 2SB941A –80 Collector to 2SB941 –60 emitter voltage 2SB941A VCEO –80 V Emitter to base voltage VEBO –5 V Peak collector current ICP –5 A Collector current IC Collector power TC=25°C dissipation Ta=25°C PC –3 A 35 W 2 Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C 14.0±0.5 Solder Dip 4.0 16.7±0.3 7.5±0.2 0.7±0.1 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 123 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff 2SB941 current 2SB941A Collector cutoff 2SB941 current 2SB941A Emitter cutoff current Collector to emitter 2SB941 voltage 2SB941A ICES ICEO IEBO VCEO VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VCE = –30V, IB = 0 VCE = –60V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 –200 µA –200 –300 µA –300 –1 mA –60 V –80 Forward current transf...