2SD1264

Power Transistors 2SD1264, 2SD1264A Silicon NPN triple diffusion planar type For low-freauency power amplification For TV vertical deflection output Complementary to 2SB940 and 2SB940A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 q q q (TC=25˚C) Ratings 200 150 180 6 3 2 30 2 150 –55 to +150 Unit V V V A A W ˚C ˚C Parameter Collector to base voltage Collector to 2SD1264 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg emitter voltage 2SD1264A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Solder Dip s Absolute Maximum Ratings 14.0±0.5 4.0 High collector to emitter VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 7.5±0.2 s Features 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1264 2SD1264A (TC=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1* hFE2 VBE VCE(sat) fT Conditions VCB = 200V, IE = 0 VEB = 4V, IC = 0 IC = 50µA, IE = 0 IC = 5mA, IB = 0 IE = 500µA, IC = 0 VCE = 10V, IC = 150mA VCE = 10V, IC = 400mA VCE = 10V, IC = 400mA IC = 500mA, IB = 50mA VCE = 5V, IC = 0.5A, f = 1MHz 20 200 150 180 6 60 50 1 1 V V MHz 240 min typ max 50 50 Unit µA µA V V V Emitter to ...