2SD1261A

Power Transistors 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and 2SD1261A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings –60 –80 –60 –80 –5 –8 –4 40 1.3 150 –55 to +150 Unit V 1.5±0.1 s Features 1.5max. 10.5min. 2.0 1.1max. 0.8±0.1 0.5max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB938 2SB938A 2SB938 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.54±0.3 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 emitter voltage 2SB938A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 10.0±0.3 6.0±0.3 V A A W 1.5–0.4 2.0 3.0–0.2 4.4±0.5 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.08±0.5 ˚C 1 2 3 ˚C s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB938 2SB938A 2SB938 2SB938A 2SB938 2SB938A (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf IC = –3A, IB1 = –12mA, IB2 = 12mA C * 1:Base 2:Collector 3:Emitter N Type Package (DS) Conditions VCB = –60V, IE = 0 VCB = –80V, IE = 0...