2SD1252A

Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB929 and 2SB929A s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SD1252 base voltage 2SD1252A VCBO 60 80 V Collector to 2SD1252 emitter voltage 2SD1252A VCEO 60 80 V Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VEBO ICP IC PC 6 5 3 35 1.3 V A A W Junction temperature Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Collector cutoff 2SD1252 current 2SD1252A Collector cutoff 2SD1252 current 2SD1...