Ordering number:1029C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB927/2SD1247
Large-Current Driving Applications
A...
Ordering number:1029C
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB927/2SD1247
Large-Current Driving Applications
Applications
· Power supplies, relay drivers, lamp drivers, electrical equipment.
Features
· Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO.
Package Dimensions
unit:mm 2006A
[2SB927/2SD1247]
( ) : 2SB927
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature
VCBO VCEO VEBO
IC ICP PC Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Common Base Output Capacitance Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO IEBO hFE1 hFE2
fT Cob VCE(sat)
VCB=(–)20V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)0.1A VCE=(–)2V, IC=(–)1.5A
VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz IC=(–)1.5A, IB=(–)75mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(–)1.5A, IB=(–)75mA
* : The 2SB927/2SD1247 are classified by 0.1A hFE as follows : 100 R 200 140 S 280
EIAJ : SC-51 SANYO : MP
B : Base C : Collector E : Emitter
Ratings (–)30 (–)25 (–)6 (–)2.5 (–)5 1.0 150
–55 to +150
Unit V V V A A W ˚C ˚C
200 T
Ratings min typ
100* 65 130 150 19(32) 0.18 (–0.35) 0.85
max (–)0.1 (–)0.1 560*
0.4 (–0.6)
1.2
400 ...