2SD1224
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington)
2SD1224
Pulse Motor Drive, Hammer Driv...
2SD1224
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process) (darlington)
2SD1224
Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
· High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating
30 30 10 1.5 0.15 1.0 10 150 −55 to 150
Unit V V V A A
W
°C °C
Equivalent Circuit
BASE
COLLECTOR
EMITTER
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
1 2002-07-23
2SD1224
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat)
VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 150 mA IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA
Min Typ. Max Unit
― ― 10 µA
― ― 10 µA
30 ― ―
V
4000 ―
―
― ― 1.5 V
― ― 2.2 V
Turn-on time Switching time Storage time
Fall time
ton
OUTPUT
― 0.18 ―
20 µs
IB1
INPUT
IB1 15 Ω
tstg
IB2 IB2
― 0.6 ― µs
VCC ≈ 15 V
tf IB1 = −IB2 = 1 mA, DU...