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2SD1221

Toshiba Semiconductor

Silicon NPN Transistor


Description
TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 2SD1221 Audio Frequency Power Amplifier Application Unit: mm Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) High power dissipation: PC = 20 W (Tc = 25°C) Complementary to 2SB906 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Ratin...



Toshiba Semiconductor

2SD1221

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