2SD1211

Transistor 2SD1211 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB987 5.9± 0.2 Unit: mm 4.9± 0.2 s Features q q High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. (Ta=25˚C) Ratings 120 120 5 1 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 1.27 0.45–0.1 +0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.5± 0.5 s Absolute Maximum Ratings 2.54± 0.15 0.7–0.2 +0.3 0.7± 0.1 8.6± 0.2 0.45–0.1 1.27 +0.2 s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = 0.1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA VCE = 5V, IC = 500mA IC = 300mA, IB = 30mA IC = 300mA, IB = 30mA VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 20 min 120 5 130 50 1 1.2 V V MHz pF 330 typ max Unit V V *h FE1 Rank classification R 130 ~ 220 S 185 ~ 330 Rank hFE1 3.2 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package 1 Transistor PC — Ta 1.2 200 Ta=25˚C 2SD1211 IC — VCE Collector to emitte...