2SD1205

Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington For low-frequency amplification 6.9±0.1 0.4 Unit: mm 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q 1.5 1.5 R0.9 R0.9 q 0.85 0.55±0.1 1.25±0.05 0.45±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1205 2SD1205A 2SD1205 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO (Ta=25˚C) 3 2 1 Ratings 30 60 25 50 5 750 500 400 150 –55 ~ +150 Unit V 1:Base 2:Collector 3:Emitter 2.5 2.5 emitter voltage 2SD1205A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C EIAJ:SC–71 M Type Mold Package Internal Connection C B ≈200Ω E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1205 2SD1205A 2SD1205 2SD1205A (Ta=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE*1 VCE(sat) VBE(sat) fT Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 10V, IC = 500mA*2 IC = 500mA, IB = 0.5mA*2 IC = 500mA, IB = 0.5mA*2 VCB = 10V, IE = –50mA, f = 200MHz 150 *2 min typ max 100 100 4.1±0.2 q Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. M type package allowing easy automatic and manual insertion as wel...