2SD1140
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)
2SD1140
Micro Motor D...
2SD1140
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process) (Darlington power
transistor)
2SD1140
Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
· High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
30 30 10 1.5 50 900 150 −55 to 150
Unit
V V V A mA mW °C °C
Equivalent Circuit
BASE
COLLECTOR
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
EMITTER
1 2003-02-04
2SD1140
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat)
VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 150 mA IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA
Min Typ. Max Unit
― ― 10 µA
― ― 10 µA
30 ― ―
V
4000 ―
―
― 1.5 V
― 2.2 V
Turn-on time
ton
20 µs
Input
Output ― 0.2 ―
IB1 IB2 15 Ω
Switching time Storage time Fall time
Marking
tstg
VCC = 15 V tf
IB1 = −IB2 = 1 mA, duty cycle ≤ 1%
― 0.6 ― µs ― ...