2SD1138

2SD1138 Silicon NPN Triple Diffused ADE-208-908 (Z) 1st. Edition Sep. 2000 Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861 Outline TO-220AB 1 23 1. Base 2. Collector (Flange) 3. Emitter 2SD1138 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC (peak) PC PC * 1 Tj Tstg Rating Unit 200 V 150 V 6 V 2 A 5 A 1.8 W 30 W 150 °C –45 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Collector to emitter breakdown V(BR)CEO 150 — voltage Emitter to base breakdown V(BR)EBO 6 — voltage Collector cutoff current I CBO — — DC current transfer ratio hFE1*1 60 — hFE2 60 — Collector to emitter saturation VCE (sat) — — voltage Base to emitter voltage VBE — — Collector output capacitance Cob — 20 Note: 1. The 2SD1138 is grouped by hFE1 as follows. 2. Pulse test. Max Unit — V — V 1 µA 320 — 3.0 V 1.0 V — pF Test conditions IC = 50 mA, RBE = ∞ IE = 5 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 10 V, IC = 500 mA*2 IC = 500 mA, IB = 50 mA*2 VCB = 4 V, IC = 50 mA VCB = 100 V, IE = 0, f = 1 MHz B 60 to 120 C D 100 to 200 160 to 320 2 Collector power dissipation Pc (W) Maximum Collector Dissi...