Ordering number : ENN694F
2SB815 / 2SD1048
PNP / NPN Epitaxial Planar Silicon Transistors
2SB815 / 2SD1048
General-Purp...
Ordering number : ENN694F
2SB815 / 2SD1048
PNP /
NPN Epitaxial Planar Silicon
Transistors
2SB815 / 2SD1048
General-Purpose AF Amplifier Applications
Features
Ultrasmall package allows miniaturization in end products.
Large current capacity (IC=0.7A) and low-saturation voltage.
Package Dimensions
unit : mm 2018B
[2SB815 / 2SD1048]
0.4 3
0.16 0 to 0.1
1.5 0.5 2.5
Specifications
( ) : 2SB815 Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
1 0.95 0.95 2 1.9 2.9
0.8 1.1
0.5
1 : Base 2 : Emitter 3 : Collector
SANYO : CP
Conditions
Ratings (--)20 (--)15 (--)5 (--)0.7 (--)1.5 200 125
--55 to +125
Unit V V V A A
mW °C °C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
ICBO IEBO hFE1 hFE2
VCB=(--)15V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(--)50mA VCE=(--)2V, IC=(--)500mA
* : The 2SB815, 2SD1048 are classified by 50mA hFE as follows :
2SB815 200
B6
400 300
B7
600
2SD1048 200
X6
400 300
X7
600 450
X8
Note : Marking : B (2SB815), X (2SD1048)
hFE rank : 6, 7 (2SB815), 6, 7, 8 (2SD1048)
900
min
(200*)200* 80
Ratings typ
max (--)0.1 (--)0.1 (600*)900*
Unit
µA µA
Continued on next page.
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