Transistors
2SC5939
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
Unit: mm
■ ...
Transistors
2SC5939
Silicon
NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
Unit: mm
■ Features
High transition frequency fT Small collector output capacitance (Common base, input open cir-
0.33+–00..0025 3
0.10+–00..0025
0.15 min.
0.80±0.05 1.20±0.05
5˚
0.15 min.
cuited) Cob and reverse transfer capacitance (Common base) Crb SSS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
0.23+–00..0025
12
(0.40) (0.40) 0.80±0.05 1.20±0.05
5˚
/ ■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
e e) Collector-base voltage (Emitter open) VCBO
15
V
0.15 max.
c e. d typ Collector-emitter voltage (Base open) VCEO
10
0 to 0.01 0.52±0.03
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
3
V
a e cle con Collector current
IC
50
mA
lifecy , dis Collector power dissipation
PC
100
mW
n u ct ped Junction temperature
Tj
125
°C
te tin Produ ed ty Storage temperature
Tstg −55 to +125 °C
1: Base 2: Emitter 3: Collector SSSMini3-F1 Package
Marking Symbol: 1S
in n followingefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
es plan Parameter
Symbol
Conditions
a o clud pe, Collector-emitter voltage (Base open) c ed in ce ty Emitter-base voltage (Collector open)
tinu nan Collector-base cutoff current (Emitter open)
M is iscon ainte Forward current transfer ratio
e/D e, m hFE ratio
Dintenanacnce typ Collector-emitter saturation voltage
...