2SC5913

Power Transistors 2SC5913 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT Monitor 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features High breakdown voltage: VCBO ≥ 1 500 V Wide safe operation area Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚ ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current * Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VEBO IB IC ICP PC Rating 1 500 1 500 5 3 6 9 40 3 150 −55 to +150 °C °C Unit V V V A A A W 3.3±0.3 18.6±0.5 (2.0) Solder Dip 5˚ 1 2 3 (2.0) 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package Internal Connection C B E Note) *: Non-repetitive peak collector current ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Emitter-base voltage (Collector open) Forward voltage Collector-base cutoff current (Emitter open) Symbol VEBO VF ICBO hFE VCE(sat) VBE(sat) fT tstg tf IF = 3 A VCB = 1 000 V, IE = 0 VCB = 1 500 V, IE = 0 Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Storage time Fall time VCE = 5 V, IC = 3 A IC = 3 A, IB = 0.75 A IC = 3 A, IB = 0.75 A VCE = 10 V, IC = 0.1 A, f = 0.5 MHz IC = 3 A, Resistance l...