2SC5880
Transistors
Power transistor (60V, 2A)
2SC5880
zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)...
2SC5880
Transistors
Power
transistor (60V, 2A)
2SC5880
zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093 zExternal dimensions (Unit : mm)
ATV
6.8 2.5
0.65Max.
1.0
0.5 2.54 2.54
0.9
(1) (2) (3)
(1) Emitter (2) Collector (3) Base
1.05
14.5
4.4
0.45
Taping specifications
Symbol : C5880
zApplications Low frequency amplifier High speed switching
zStructure
NPN Silicon epitaxial planar
transistor
zPackaging specifications
Package
Type
Taping
TV2 2500
Code Basic ordering unit (pieces)
2SC5880
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol VCBO VCEO VEBO DC IC ICP PC Limits
60 60 6 2 4 1.0 150 −55 to 150
Unit V V V A A W °C °C
∗
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature
∗Pw=10ms
Pulsed
Tj
Tstg
Rev.A
1/3
2SC5880
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. 60 60 6 − − Typ. − − − − − Max. − − − 1.0 1.0 Unit V V V µA µA Condition IC=1mA IC=100µA IE=100µA VCB=40V VEB=4V IC=1.0A IB=0.1A VCE=2V IC=100mA VCE=10V IE= −100mA f=10MHz VCB=10V IE=0mA f=1MHz IC=2A IB1=20...